Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- 1 February 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (2S) , 1410
- https://doi.org/10.1143/jjap.35.1410
Abstract
Room-temperature operation of a ZnSe-active-layer double-heterostructure laser diode (LD) was observed. The lasing wavelength was 471 nm. The emission energy shift with increasing current is explained by band filling and band-gap shrinkage. The threshold carrier density is calculated to be 4×1018 cm-3. We conclude that the dominant lasing mechanism of II–VI double heterostructure laser diodes is the recombination of electron-hole plasma. It is also the dominant mechanism in ZnCdSe quantum-well separate-confinement-heterostructure laser diodes. In both types of LD's, the band-gap shrinkage was observed near the threshold.Keywords
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