Ballistic transport and velocity overshoot in semiconductors: Part I—Uniform field effects

1 February 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 30 (2) , 150-153
https://doi.org/10.1109/t-ed.1983.21088

Abstract

The relationship between ballistic electron transport and velocity overshoot, in semiconductor materials, is clarified. By considering the behavior of electrons in a uniform electric field, we show that while ballistic transport can coexist with velocity overshoot, it is not necessary for overshoot. Furthermore, we show that ballistic transport will not lead to overshoot unless one of the two classic mechanisms for overshoot is also operative.

Keywords

GALLIUM ARSENIDE
RELAXATION TIME
SATELLITES
STEADY STATE
PHYSICS
BALLISTIC TRANSPORT
SEMICONDUCTOR DEVICES
CLASSICAL MECHANICS
ELECTRON TRANSPORT
HELIUM
ELECTRIC FIELD
PHONONS
ELECTRONS

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