Threshold switching in gallium telluride single crystals
- 15 November 1973
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 6 (17) , 2115-2123
- https://doi.org/10.1088/0022-3727/6/17/318
Abstract
Gallium telluride single crystals have been grown and cleaved to form thin platelet specimens. Small-area contacts on opposite faces produce threshold switching characteristics when high fields are applied across them, while large-area contact produce memory switching. Detailed measurements of conductivity under DC and pulsed conditions are presented, and the threshold switching is interpreted in terms of a thermal mechanism.Keywords
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