A new hot-electron kinetic equation: analytical results

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Abstract
The hot-electron kinetic equations recently introduced by Herbert and Till (1981, 1982, 1983) are analysed for silicon using relaxation approximations. The results yield a threshold field for strong electron heating and under the approximation of neglecting optic phonon absorption allow a simple solution for the monolithic hot-electron transistor structure described by Shannon (1981, 1983). The results show how the effective scattering rates for quasi-ballistic electrons at high energy can be reduced from the normal zero-field values, thus allowing large transport factors. The transport factors are approximately independent of the detailed field distribution in the base and collector, yielding a new overshoot effect.