High-Speed Microwave Switching of Semiconductors--II
- 1 April 1959
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 7 (2) , 272-276
- https://doi.org/10.1109/tmtt.1959.1124692
Abstract
A relationship between low-power isolation and small-signal, low-frequency diode resistance is reported. A study of ambient heating indicates that with increasing temperature the diode characteristics tend to approach the line characteristic of the above relationship. Observed switching speeds of 1.5 to 3.0 mµs are reported. A theory is presented which agrees with the switching time data and predicts microwave switching times as low as 0.2 to 0.3 mµs. High speed switching is discussed with reference to significant parameters, e.g., hole storage, internal heating, and pulse reverse diode characteristics.Keywords
This publication has 2 references indexed in Scilit:
- High-Speed Microwave Switching of SemiconductorsJournal of Applied Physics, 1957
- Pulse Measurement of the Inverse Voltage Characteristic of Germanium Point ContactsPhysical Review B, 1951