Origins of interfacial disorder in GaSb/InAs superlattices

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Abstract
The interface surfaces of short-period GaSb/InAs superlattices grown by molecular beam epitaxy have been studied in situ with scanning tunneling microscopy. Migration enhanced epitaxy was used at the interfaces in order to control bond type. Interfaces on GaSb(001) are found to be smoother than those on strained InAs(001), and the InSb-like interfaces are smoother than GaAs-like ones. The primary source of disorder at these interfaces appears to be the kinetically determined topography of the growth surfaces, with intermixing playing a secondary role.

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