High Reliability of Ultrathin Improved SiN on Poly-Si
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12A) , L2301-2304
- https://doi.org/10.1143/jjap.28.l2301
Abstract
Ultrathin, improved SiN film, which was formed by removing the top oxide from SiO2/SiN stacked dielectric film on poly-Si, was investigated in terms of electrical properties. As a result, the ultrathin, improved SiN (top-oxide-removed SiN; T.O.R.SiN) revealed 3.8 nm SiO2 equivalent thickness and was superior to SiO2/SiN in TDDB (time dependent dielectric breakdown). This T.O.R.SiN shows promise as a dielectric film for memory capacitors in DRAMs of more than 16M bits.Keywords
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