Comparison of the Energy-Band Structure of Ge-Si with Those of Si and Ge

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Abstract
A first-principles self-consistent orthogonalized-plane-wave energy-band calculation has been performed for Ge-Si using a nonrelativistic formalism and Slater's free-electron exchange approximation. The imaginary part of the dielectric constant, valence- and conduction-band densities of states, spin-orbit splittings, deformation energies, and the x-ray form factors (Fourier transforms of the electron charge density) have been calculated and compared with the results obtained for Si and Ge. The theoretical results are compared with experimental data.