Interface formation and energy level alignment of pentacene on SiO2
- 1 November 2003
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 94 (9) , 5782-5786
- https://doi.org/10.1063/1.1615298
Abstract
We examined the interface formed by pentacene deposition onto a substrate. We found that upon pentacene deposition onto the pentacene vacuum level aligns with that of We observe the immediate appearance of a measurable pentacene highest occupied molecular orbital upon deposition of as little as 2 Å of pentacene onto the surface. This suggests that there are no chemical bonds at these interfaces. Measurements that examine the behavior of pentacene deposited onto show ordered growth of pentacene with no sign of chemical interaction or charge transfer.
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