Complementary circuit with AlGaAs/GaAs heterostructure MISFETs employing high-mobility two-dimensional electron and hole gases

7 November 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (23) , 1116-1117
https://doi.org/10.1049/el:19850793

Abstract

A new complementary circuit employing high-mobility two-dimensional electron and hole gases (2DEG and 2DHG)induced at the AIGaAs/GaAs heterointerface has been suc-cessfully fabricated on an n⁺-Ge/undoped AlGaAs/undopedGaAs heterostructure grown by molecular beam epitaxy. Thecircuit includes an n⁺-Ge/WSi;c-gate n-channel FET and aWSi_x-gate p-channel FET fabricated by self-aligned implan-tation technology. A 15-stage ring oscillator shows aminimum delay time of 125 ps at 300 K and 100 ps at 83 K.

Keywords

125 PS MINIMUM DELAY TIME AT 300K
ALGAAS/GAAS HETEROSTRUCTURE MISFETS
MOLECULAR BEAM EPITAXY
N+-GE/WSIX-GATE N-CHANNEL FET
HOLE GASES
2DHG
TWO-DIMENSIONAL ELECTRON GAS
2DEG
III-V SEMICONDUCTORS
WSIX-GATE P-CHANNEL FET
SELF-ALIGNED IMPLANTATION TECHNOLOGY
N+-GE/UNDOPED ALGAAS/UNDOPED GAAS HETEROSTRUCTURE
COMPLEMENTARY CIRCUIT
100 PS MINIMUM DELAY TIME AT 83K
HIGH-MOBILITY
15-STAGE RING OSCILLATOR

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