Very high-transconductance heterojunction field-effect transistor (HFET)
- 16 January 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (2) , 77-79
- https://doi.org/10.1049/el:19870056
Abstract
A new form of FET has been demonstrated in the GaAs/AlGaAs material system. Designated the HFET, it has shown a transconductance of 500mS/mm at 300K for a nominal Lg =2μm and a drain current of 430mA/mm. The conduction occurs in an inversion channel at the heterointerface.Keywords
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