Characterization of anisotropic etching properties of single-crustal silicon: surface roughening as a function of crystallographic orientation

1 January 1998

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 10846999,p. 201-206
https://doi.org/10.1109/memsys.1998.659754

Abstract

We investigated roughening of a single-crystal silicon surface during chemical anisotropic etching using KOH water solution. The change in roughness strongly depends on the crystallographic orientation of the silicon. We plotted a map showing roughness distribution as a function of orientation. A smooth surface appears in a region including the [100], [211], and [311] planes. A very rough surface appears in a region including the [320] and [210] planes. We further clarified that the roughened surface shows facet textures composed of certain crystallographic planes. This result suggests that the orientation-dependent etching rate and surface roughening are closely related.

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