Theory of Mosfet Operation in Small-Grain Polysilicon
- 1 January 1981
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A quantitative model of the effect of grain size on the resistivity of polycrystalline silicon resistorsIEEE Electron Device Letters, 1980
- Resistivity changes in laser-annealed polycrystalline silicon during thermal annealingApplied Physics Letters, 1979
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Zero-bias resistance of grain boundaries in neutron-transmutation-doped polycrystalline siliconJournal of Applied Physics, 1978
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975