The convergent effect of the annealing temperatures of electron irradiated defects in FZ silicon grown in hydrogen
- 31 March 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 53 (11) , 975-978
- https://doi.org/10.1016/0038-1098(85)90472-7
Abstract
No abstract availableKeywords
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