Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky Barriers
- 1 August 1964
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (8) , 2534-2536
- https://doi.org/10.1063/1.1702894
Abstract
Photoelectric measurements of the bias dependence of the potential energy barrier for electrons in gold n-type silicon Schottky diodes show that the image force dielectric constant deduced from direct measurement of the barrier lowering is 12.0±0.5, in close agreement with the infrared dielectric constant of silicion, and independent of the applied field for fields between 104 and 2×105 V/cm. The current-voltage characteristics of these diodes at room temperature cannot be explained on the basis of pure Schottky emission.This publication has 7 references indexed in Scilit:
- Conduction properties of the Au-n-type—Si Schottky barrierSolid-State Electronics, 1963
- A new "Hot electron" triode structure with semiconductor-metal emitterIRE Transactions on Electron Devices, 1962
- Attenuation Length Measurements of Hot Electrons in Metal FilmsPhysical Review B, 1962
- Current gain in metal-insulator tunnel triodesSolid-State Electronics, 1961
- Infrared Refractive Indexes of Silicon Germanium and Modified Selenium Glass*Journal of the Optical Society of America, 1957
- Zur Theorie des Germaniumgleichrichters und des TransistorsThe European Physical Journal A, 1953
- High Inverse Voltage Germanium RectifiersJournal of Applied Physics, 1949