Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

25 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 247-250
https://doi.org/10.1109/iedm.2002.1175824

Abstract

Metal-gate FinFET and FDSOI devices were fabricated using total gate silicidation. Devices satisfy the following metal-gate technology requirements: ideal mobility, low gate leakage, high transconductance, competitive I/sub on//I/sub off/, and adjustable V/sub t/. Six silicide gate materials are presented, as well as two silicide workfunction engineering methods.

Keywords

FINFETS
SILICIDES
THRESHOLD VOLTAGE
GATE LEAKAGE
SILICON ON INSULATOR TECHNOLOGY
MICROELECTRONICS
SILICIDATION
EPITAXIAL GROWTH
IMPLANTS
DOPING

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