Annealing experiments on pure lead after electron irradiation at 4.7 K and below 3 K

Abstract
Using electrical resistivity measurements the recovery of pure lead irradiated at low temperature with electrons has been investigated from 3 K up to 340 K as a function of electron dose and energy. Doping experiments have also been performed. The annealing behaviour of lead is similar to other fcc-metals, except gold. The recovery stage I at about 4 K (first reported by Birtcher et al. 6 clearly shows the separation of I D and I E due to the correlated and un-correlated annealing of interstitials. After stage II (5 K to 120 K) the dose dependent recovery stage III has been observed at about 160 K. In this region the single-vacancies should migrate and anneal with an activation energy Q m 1v = 0.43 ± 0.03 eV determined by the “change of slope” method. In the last recovery stage usually called stage V at about room temperature vacancy clusters should dissolve. The measured activation energy of this process is about 1.05 eV which is equal to the self-diffusion energy in lead.

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