Ultraviolet Photoluminescence of ZnO Thin Film Prepared by Vapor Phase Growth Using a Metallic Zinc Source

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Abstract
ZnO thin films with good luminescence properties are deposited on sapphire (0001) substrates by vapor phase growth at atmospheric pressure using a metallic zinc source. A strong room-temperature free-exciton emission at about 3.3 eV and a weak visible luminescence are observed from as-grown samples. From the samples annealed at 800°C, stimulated emission due to exciton-exciton collision was observed at high excitation densities. The threshold excitation density for the stimulation was 4 MW/cm2 at room-temperature.