Si/SiGe heterostructure mitatt diode

27 October 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (22) , 1386-1387
https://doi.org/10.1049/el:19880948

Abstract

The first experimental results on Si/SiGe heterostructure mitatt diodes are reported. The layers are grown by MBE. At 103 GHz a very low noise CW output of 25 mW is obtained. With an optimisation of the design higher output powers with still low noise operation are expected.

Keywords

103 GHZ
SI-SIGE
MITATT DIODE
25 MW
EHF
SEMICONDUCTORS
MILLIMETRE WAVE DEVICE
HETEROSTRUCTURE
MIXED TUNNELLING AVALANCHE TRANSIT TIME
MICROWAVE DEVICES
MBE
LOW NOISE CW OUTPUT
MM-WAVE OPERATION

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