Electrical and Structural Characterizations of Cu(InGa)Se2 Thin Films Using Electrochemical Capacitance–Voltage Method and Focused-Ion Beam Process
- 1 January 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (1R) , 109
- https://doi.org/10.1143/jjap.39.109
Abstract
The electrochemical capacitance–voltage (ECV) method and the focused-ion beam (FIB) process were adopted for the evaluation of device-quality Cu(InGa)Se2 (CIGS) films. The profiling of the carrier concentrations and the structural properties were successfully carried out by the ECV and FIB methods, respectively. It was found from the ECV measurements that the hole concentration of CIGS film grown by the selenization method was in the order of 1017 cm-3. Furthermore, the FIB process showed that the CIGS films grown by the selenization method had voids in the film. These results indicate that both methods are practical and effective tools for characterizing the CIGS thin films.Keywords
This publication has 4 references indexed in Scilit:
- The Performance of Cu(In, Ga)Se2-Based Solar Cells in Conventional and Concentrator ApplicationsMRS Proceedings, 1996
- Electrochemical capacitance-voltage profiling of n-type molecular beam epitaxy ZnSe layersApplied Physics Letters, 1992
- Improved ohmic properties of Au–Ge Contacts to thin n -GaAs layers alloyed with an SiO 2 overlayerElectronics Letters, 1979
- The Detection of Structural Defects in GaAs by Electrochemical EtchingJournal of the Electrochemical Society, 1978