Radiation-Induced Perturbations of the Electrical Properties of the Silicon-Silicon Dioxide Interface
- 1 January 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 16 (6) , 195-202
- https://doi.org/10.1109/tns.1969.4325526
Abstract
Interface-state densities and MOS transistor characteristics dependent upon such states have been studied as a function of radiation dose and type. Special MOS devices possessing doped silicon-dioxide layers as well as undoped "control" devices have been utilized. Infrared absorption measurements were performed on silicon-dioxide samples before and after exposure to radiation, as well as for doped and undoped samples. A model based on structural modifications of the silicon-dioxide-films is proposed for the build-up of interface-states resulting from exposure to radiation. It has been found that with the proper doping of the silicon-dioxide films, the build-up of such states can be reduced. Using such doped gate-dielectrics, planar semiconductor devices much less sensitive to radiation have been fabricated.Keywords
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