Reliability in submicron MOSFETs stressed at 77 K

1 January 1986

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 382-385
https://doi.org/10.1109/iedm.1986.191198

Abstract

Transconductance degradation in n channel MOSFETs stressed at 77 K was investigated, focused on low drain voltage stressing. Temperature dependence of degraded transconductance shows the existence of increased Coulomb centers in the channel, the origin of which is proposed from a viewpoint of Si-Si bond breaking at the Si/SiO2interface. Drain voltage dependence of substrate current was investigated in detail as a function of temperature. Results are discussed from viewpoints of both electron energy and temperature dependence of energy band gap in silicon. Gate oxide reliability at 77 K was also studied and it is shown that thinner gate oxides exhibit higher reliablity, even at 77 K as well as at room temperature. It is concluded that low temperature MOSFET operation is highly promising.

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