Low energy electron-enhanced etching of GaAs(100) in a chlorine/hydrogen dc plasma
- 15 April 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (16) , 2255-2257
- https://doi.org/10.1063/1.115876
Abstract
Low energy electron‐enhanced etching of GaAs(100) has been achieved by placing the sample on the anode of a low‐pressure hydrogen/chlorine dc discharge. Samples etched at room temperature reveal good anisotropy (≳20), good selectivity (≳200 against SiO2 masks at room temperature), and smooth surfaces at etch rates of 250 Å/min; etch rates up to 4.5 μm/min were achieved at 150 °C. The dependence of the etch characteristics on gas composition, pressure, and temperature is described.Keywords
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