Reactive molecular beam epitaxy
- 1 January 1983
- journal article
- research article
- Published by Taylor & Francis in Critical Reviews in Solid State and Materials Sciences
- Vol. 11 (4) , 287-316
- https://doi.org/10.1080/10408438308244621
Abstract
No abstract availableKeywords
This publication has 98 references indexed in Scilit:
- Chemical vapour deposition of thin films of BN onto fused silica and sapphireThin Solid Films, 1981
- Optical properties of AlN epitaxial thin films in the vacuum ultraviolet regionJournal of Applied Physics, 1979
- Growth Kinetics and Catalytic Effects in the Vapor Phase Epitaxy of Gallium NitrideJournal of the Electrochemical Society, 1978
- Synthesis of III–V semiconductor nitrides by reactive cathodic sputteringThin Solid Films, 1976
- Epitaxial growth of aluminum nitride films on sapphire by reactive evaporationApplied Physics Letters, 1975
- Al 2 O 3 Films Prepared by Electron-Beam Evaporation of Hot-Pressed Al2O3 in Oxygen AmbientJournal of Vacuum Science and Technology, 1971
- The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitationCzechoslovak Journal of Physics, 1970
- Dielectric Properties of Reactively Sputtered Films of Aluminum NitrideJournal of Vacuum Science and Technology, 1969
- Epitaxial growth of aluminum nitrideSolid-State Electronics, 1967
- Optical Properties of Silicon Monoxide in the Wavelength Region from 024 to 140 Microns*Journal of the Optical Society of America, 1954