Prediction and Measurement Results of Radiation Damage to CMOS Devices on Board Spacecraft

1 January 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 24 (6) , 2289-2293
https://doi.org/10.1109/TNS.1977.4329209

Abstract

The final results from the CMOS Radiation Effects Measurement (CREM) experiment, flown on Explorer 55, are being presented and discussed, based on about 15 months of observations and measurements. Conclusions are given relating to (a) long range annealing, (b) effects of operating temperature on semiconductor performance in space, (c) biased and unbiased P-MOS device degradation, (d) unbiased n-channel device performance, (e) changes in device transconductance, and (f) difference in ionization efficiency between Co-60 gamma rays and 1 Mev Van deGraaff electrons. Additionally, the performance of devices in a heavily shielded electronic subsystem box within the spacecraft is evaluated and compared. Finally environment models and computational methods and their impact on device degradation estimates are being reviewed to determine whether they permit cost effective design of spacecraft.

Keywords

This publication has 3 references indexed in Scilit:

Transient Radiation Response of Hardened CMOS/SOS Microprocessor and Memory Devices
IEEE Transactions on Nuclear Science, 1980
Prediction and Measurement of Radiation Damage to CMOS Devices on Board Spacecraft
IEEE Transactions on Nuclear Science, 1976
Results of the Telstar Radiation Experiments
Bell System Technical Journal, 1963