Monolithically integrated In 0.53 Ga 0.47 As-PIN/InP-MISFET photoreceiver
- 12 April 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (8) , 314-315
- https://doi.org/10.1049/el:19840213
Abstract
In0.53Ga0.47As PIN photodiode and InP MISFET were monolithically integrated on an Fe-doped semi-insulating InP substrate. Photoreceiver sensitivities were measured at 100 Mbit/s NRZ pseudorandom signals.Keywords
This publication has 0 references indexed in Scilit: