Generation of Free Excitons and Exciton—Impurity Complexes by Fast Electrons in Extremely Anisotropic Crystals

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Abstract
The generation of free and bound excitons by fast electrons is calculated within the framework of an extremely anisotropic model of a layer crystal. Selection rules are discussed. The oscillator strength of the exciton—impurity complex is two or three orders of magnitude higher than that for free excitons in the case of direct transition and greatly decreases with increasing distance between the extrema in the case of indirect transition. For small scattering angles θ ≈ 10−3 rad the probability of generation of excitons as well as exciton—impurity complexes by fast electrons does not depend on θ.