MNOS/CCD nonvolatile analog memory
- 1 July 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 2 (7) , 165-166
- https://doi.org/10.1109/edl.1981.25384
Abstract
MNOS storage sites have been integrated with an n-channel CCD to produce a nonvolatile memory capable of storing sampled analog signals. Analog signals, sampled at the CCD input, are stored as trapped charge in the MNOS dielectric and may be replicated nondestructively after four days of storage with a linear dynamic range of 33 dB.Keywords
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