Sol-Gel processing of Nb-doped Pb(Zr, Ti)O3 thin films for ferroelectric memory applications
- 1 October 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (10) , 971-975
- https://doi.org/10.1007/bf02684205
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Measuring Fatigue in PZT Thin FilmsMRS Proceedings, 1990
- Synthesis and Microstructure of Highly Oriented Lead Titanate Thin Films Prepared by a Sol‐Gel MethodJournal of the American Ceramic Society, 1989
- Ferroelectrics for nonvolatile RAMsIEEE Spectrum, 1989
- Preparation of Pb(Zr,Ti)O3 thin films by sol gel processing: Electrical, optical, and electro-optic propertiesJournal of Applied Physics, 1988
- Preparation of ferroelectric PZT films by thermal decomposition of organometallic compoundsJournal of Materials Science, 1984