Void formation in thin Al films
- 10 August 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (6) , 424-426
- https://doi.org/10.1063/1.98410
Abstract
Al films deposited on Pt layers developed voids after annealing between 200 and 300 °C. Void formation in the Al was also observed when the Pt layer was deposited above the Al film. The amount of Al surrounding the voids increased as the voids grew. The void growth seems to saturate when all the Pt is consumed to form Pt2Al3, and the rate of void growth decreases as the thickness of the initial Al film increases. We believe the controlling mechanism is diffusion along the Al/Pt interface made possible by compound formation there.Keywords
This publication has 4 references indexed in Scilit:
- Phase formation and dissociation in the thin-film Pt/Al systemJournal of Applied Physics, 1987
- Thin-film interaction in aluminum and platinumJournal of Applied Physics, 1976
- Recent developments in the study of mechanical properties of thin filmsThin Solid Films, 1972
- Thermal Cycling and Surface Reconstruction in Aluminum Thin FilmsJournal of the Electrochemical Society, 1969