High-efficiency amorphous silicon p-i-n solar cells deposited from disilane at rates up to 2 nm/s using VHF discharges
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 115 (1-3) , 201-203
- https://doi.org/10.1016/0022-3093(89)90404-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Influence of plasma excitation frequency fora-Si:H thin film depositionPlasma Chemistry and Plasma Processing, 1987
- Amorphous silicon deposition rates in diode and triode dischargesJournal of Applied Physics, 1986
- Ion Bombardment Secondaty Electron Maintenance of Steady RF DischargeIEEE Transactions on Plasma Science, 1986
- Characteristics of high-frequency and direct-current argon discharges at low pressures: a comparative analysisJournal of Physics D: Applied Physics, 1984