Paramagnetism and antiferromagnetic d–d coupling in GaMnN magnetic semiconductor
- 8 October 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (15) , 2432-2434
- https://doi.org/10.1063/1.1406558
Abstract
The magnetization of Ga 1−x Mn x N (x<0.1) crystals was measured as a function of the magnetic field and temperature. Paramagnetic behavior typical of spin S=5/2 expected for Mn 2+ (d 5 ) magnetic centers was observed in the temperature range of 2 K <T<300 K . On the other hand, antiferromagnetic coupling between Mn ions was clearly visible. The nearest neighbor (NN) coupling constant J NN /k B =−1.9 K was estimated from the temperature dependence of the magnetization.Keywords
This publication has 21 references indexed in Scilit:
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Mn impurity inepilayersPhysical Review B, 1999
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998
- Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductorPhysical Review B, 1997
- Magnetism of Semimagnetic SemiconductorsPhysica Scripta, 1991
- Epitaxy of III–V diluted magnetic semiconductor materialsJournal of Vacuum Science & Technology B, 1990
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989
- Magnetic susceptibility of semimagnetic semiconductors: The high-temperature regime and the role of superexchangePhysical Review B, 1986
- Relation of magneto-optical properties of free excitons to spin alignment of Mn2+ ions in Cd1−xMnxTeSolid State Communications, 1979
- Electron Paramagnetic Resonance of Manganese in Gallium ArsenidePhysical Review B, 1962