Room-temperature continuous operation of p-n AlxGa1−xAs-GaAs quantum well heterostructure lasers grown on Si
- 31 August 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (9) , 637-639
- https://doi.org/10.1063/1.98371
Abstract
We describe the construction and room‐temperature (300 K) continuous (cw) operation of p‐n diode AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) lasers grown on Si substrates. The QWH crystal is grown in two stages, the first part by molecular beam epitaxy (MBE) and the single‐well quantum well active region by metalorganic chemical vapor deposition (MOCVD). Simple gain‐guided stripe configuration lasers fabricated on the MBE MOCVD QWH wafer operate cw at 300 K and have pulsed thresholds as low as 1.8×103 A/cm2.Keywords
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