Observation of turn-on action in a gate-triggered thyristor using a new microwave technique
- 1 August 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 20 (8) , 714-721
- https://doi.org/10.1109/t-ed.1973.17733
Abstract
The turn-on action by the p-base and n-emitter gates in a thyristor was studied by a new microwave technique. The initial conducting area, the lateral distribution of gate current flowing through the junction, and the time variation of excess carrier density injected into the n-base by the gate current were determined by measuring the reflection of microwave energy, vertically incident upon a small area (0.2 × 0.2 mm2) of the n-emitter layer. The new microwave technique has proved to be useful in designing new gate structures and in studying the operation of new devices.Keywords
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