Development mechanism study by dissolution monitoring of positive methacrylate photoresists
- 30 June 2000
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 53 (1-4) , 489-492
- https://doi.org/10.1016/s0167-9317(00)00362-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A Study of Case II Transport by Laser InterferometryMacromolecules, 1995
- Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resistApplied Physics Letters, 1993
- PMMA copolymers as high sensitivity electron resistsJournal of Vacuum Science and Technology, 1979
- Electron-beam resist edge profile simulationIEEE Transactions on Electron Devices, 1979
- Developer Characteristics of Poly‐(Methyl Methacrylate) Electron ResistJournal of the Electrochemical Society, 1975