Correlation between temperature and dose rate dependence of semiconductor response; influence of accumulated dose
- 31 December 1990
- journal article
- research article
- Published by Elsevier in Radiotherapy and Oncology
- Vol. 19 (4) , 345-351
- https://doi.org/10.1016/0167-8140(90)90035-u
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Quality assurance in radiotherapy by in vivo dosimetry. 1. Entrance dose measurements, a reliable procedureRadiotherapy and Oncology, 1990
- Characteristics of silicon diodes as patient dosemeters in external radiation therapyRadiotherapy and Oncology, 1988
- General specifications for silicon semiconductors for use in radiation dosimetryPhysics in Medicine & Biology, 1987
- Evaluation of temperature effects in p-type silicon detectorsPhysics in Medicine & Biology, 1986
- Radiation Damage Induced Dose Rate Non-Linearity in an N-Type Silicon DetectorActa Radiologica: Oncology, 1984
- Silicon diode dosimetryThe International Journal of Applied Radiation and Isotopes, 1982