Infrared Photodiode Optimization For Higher Temperature Operation

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Abstract
The performance of infrared sensitive photodiodes may be improved at higher operating temperatures by a reduction of excess volume in which minority carriers are thermally gen-erated within a diffusion length of the junction. This technique requires surface recombi-nation velocities typically less than 100 cm/sec. Calculations for HgCdTe indicate a peak D* above 1.5 x 1011 cm Hz½/w may be obtained at 190 K for a 5.0 µm cut-off wavelength.

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