Interface Composition Studies of Thermally Oxidized GaAs Using Auger Depth Profiling

Publisher Website
Google Scholar
Abstract
Auger electron spectroscopy and Ar‐sputter etching have been used to investigate in‐depth composition profiles of (100) thermal oxides. Double integration of the Auger signal gave more accurate depth profiles than was previously accomplished, and peak overlapping is responsible for the apparent Ga “valley” in the Auger peak‐to‐peak height depth profile. In general agreement with others, it was found that the chemical composition at the interface region was , , and free As atoms.

This publication has 0 references indexed in Scilit: