Dielectric behavior of a doped semiconductor

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Abstract
The static dielectric response of a doped semiconductor at nonzero temperature is studied here in the simple homogeneous and isotropic model. The present approach generalizes the model dielectric responses proposed by Penn and by the author accounting for free-carrier screening, or equivalently it generalizes the Dingle model of carrier screening accounting for the microscopic dielectric behavior of the medium. The effect of the present model response in the screening of a point-charge potential is explicitly shown and discussed against quite different solutions recently proposed for this same physical problem.