Space-charge wave instability in a semiconductor exhibiting field-dependent diffusion coefficient and saturated drift velocity
- 29 May 1969
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 5 (11) , 248-249
- https://doi.org/10.1049/el:19690191
Abstract
It is shown that, in a semiconductor biased in the saturation region, the combination of a field-dependent diffusion coefficient with a gradient in the steady-state electric-field distribution may lead to space-charge wave amplification.Keywords
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