Transmission electron microscopy investigation of the morphology of InP Stranski–Krastanow islands grown by metalorganic chemical vapor deposition
- 13 November 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (20) , 2981-2982
- https://doi.org/10.1063/1.114832
Abstract
We have used transmission electron microscopy to determine the morphology of InP Stranski–Krastanow islands in GaInP, grown by metalorganic chemical vapor deposition at 580 °C. We investigated both capped and uncapped islands. It was found that the fully developed islands have the principal shape of truncated pyramids with a hexagonal base both before and after overgrowth. The planes defining the islands are of {001}, {110}, and {111} types. The base dimensions are 40–50 nm and 55–65 nm in the [1̄10] and [110] directions, respectively, and the height is 12–18 nm.Keywords
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