A 16K×1b static RAM
- 1 January 1979
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper will report on the application of double poly MOS technology to a 5V 16K×1b static RAM. Typical access time and power dissipation is 45ns and 550mW, respectively.Keywords
This publication has 2 references indexed in Scilit:
- A 25ns 4K static RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- A high performance 4K static RAM fabricated with an advanced MOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977