Two-dimensional field distribution analysis of reverse biased p-n junction devices
- 31 October 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (10) , 1077-1084
- https://doi.org/10.1016/0038-1101(80)90188-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A computer study of power-limiter diode behaviorSolid-State Electronics, 1974
- Depletion layer characteristics at the surface of beveled high-voltage P-N junctionsIEEE Transactions on Electron Devices, 1973
- Field distribution near the surface of beveled P-N junctions in high-voltage devicesIEEE Transactions on Electron Devices, 1973
- Design considerations of step recovery diodes with the aid of numerical large-signal analysisIEEE Transactions on Electron Devices, 1972
- Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969
- Control of electric field at the surface of P-N junctionsIEEE Transactions on Electron Devices, 1964
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949