Summary Abstract: Silicon MBE

1 April 1981

journal article
Published by American Vacuum Society in Journal of Vacuum Science and Technology

Vol. 18 (3) , 769-771
https://doi.org/10.1116/1.570944

Abstract

This paper summarizes a review of recent developments in silicon molecular beam epitaxy. These include ionized doping, heteroepitaxial growth on insulators and silicides, and MBE devices.

Keywords

SUMMARY
SILICON MBE
BEAM
HETEROEPITAXIAL
SILICIDES
IONIZED
EPITAXY
DOPING