Photoluminescence of doped n-type indium arsenide and indium antimonide crystals
- 16 December 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 50 (2) , K251-K254
- https://doi.org/10.1002/pssa.2210500280
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Photoluminescence of heavily doped n-type gallium antimonidePhysica Status Solidi (a), 1978
- Recombination Emission in InSbPhysical Review B, 1966
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957