Power MOSFET dynamic large-signal model
- 1 January 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings I Solid State and Electron Devices
- Vol. 130 (2) , 73-79
- https://doi.org/10.1049/ip-i-1.1983.0018
Abstract
A large-signal dynamic circuit model for the double-diffused vertical power MOSFET is reported. The model is physically based and its parameters are readily determined from static curve tracer measurements and small-signal measurements using simple data-reduction techniques. The equivalent circuit can be implemented in general purpose nonlinear circuit analysis computer programs, such as SPICE 2, for use in the analysis and design of switching circuits. The accuracy of the model is verified by the excellent correlation obtained between detailed simulated and measured switching characteristics on an experimental high-speed switching circuit.Keywords
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