Acceptor behaviour of germanium in gallium arsenide
- 1 January 1967
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 28 (12) , 2397-2400
- https://doi.org/10.1016/0022-3697(67)90025-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Hall Effect and Resistivity of Zn-Doped GaAsJournal of Applied Physics, 1966
- Behavior of Germanium in Gallium ArsenideJournal of Applied Physics, 1962
- Germanium-Doped Gallium Arsenide Tunnel DiodesJournal of the Electrochemical Society, 1961
- Influence of Arsenic Pressure on the Doping of Gallium Arsenide with GermaniumJournal of Applied Physics, 1960
- Hall Effect Studies of Doped Zinc Oxide Single CrystalsPhysical Review B, 1957
- Ionization Interaction between Impurities in Semiconductors and InsulatorsPhysical Review B, 1956