Oxidation mechanisms in WSi2 thin films
- 1 July 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (1) , 76-78
- https://doi.org/10.1063/1.90151
Abstract
The utilization of WSi2 thin films as gate electrodes in field‐effect transistors depends on the ability of this material to form a continuous electrically insulating SiO2 overlayer. In the steam oxidation of WSi2 films deposited on polysilicon, SiO2 forms on the surface by means of the rapid diffusion of Si through the WSi2 which appears in this case to be quite inert. During the initial stages of the steam oxidation of WSi2 films deposited on SiO2, removal of Si from the silicide (to form SiO2) apparently leads to the formation of free W, rather than the anticipated tungsten‐rich W3Si3.Keywords
This publication has 4 references indexed in Scilit:
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- Reaction kinetics of tungsten thin films on silicon (100) surfacesJournal of Applied Physics, 1973
- High‐Temperature Oxidation of Molybdenum DisilicideJournal of the American Ceramic Society, 1966
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