Electronic Processes in Laser Ablation of Semiconductors and Insulators
- 1 January 1994
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 79 references indexed in Scilit:
- Dynamical interaction of surface electron-hole pairs with surface defects: Surface spectroscopy monitored by particle emissionsPhysical Review Letters, 1993
- Primary and secondary mechanisms in laser-pulse sputteringNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Temperature dependence of the laser-induced Ga0 emission from a GaP(110) surfaceSurface Science, 1991
- Characterization of surface defects by means of laser-induced Ga0emission from GaP surfacesJournal of Physics: Condensed Matter, 1991
- Laser-Induced Material ModificationsOptical Engineering, 1989
- Can Pulsed Laser Excitation of Surfaces Be Described by a Thermal Model?Physical Review Letters, 1988
- Energy deposition at insulator surfaces below the ultraviolet photoablation thresholdJournal of Vacuum Science & Technology B, 1987
- Theoretical study of the electronic structure of GaP(110)Physical Review B, 1981
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Formation of Interstitials in Alkali Halides by Ionizing RadiationPhysical Review B, 1959