Dissociation of near-screw dislocations in germanium and silicon
- 1 January 1975
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 31 (1) , 105-113
- https://doi.org/10.1080/14786437508229289
Abstract
The separation of Shookley partial dislocations in Si and Ge has been measured for dislocations at and near screw orientation using the weak-beam method of electron microscopy. The separations appear to fall into two categories. The first category has dissociations which agree with those expected from previous measurements for dislocation orientations above 30°, and the stacking fault between the partials is intrinsic in character. The second category has dissociations which are wider than those in the first category, and the stacking fault is extrinsic in character. A model to explain these observations is proposed.Keywords
This publication has 4 references indexed in Scilit:
- Structure of dislocations in germaniumJournal of Applied Physics, 1973
- Extended dislocations in germaniumPhilosophical Magazine, 1973
- The observation of dissociated dislocations in siliconPhilosophical Magazine, 1970
- Velocity Measurements on Screw‐ and 60°‐Dislocations in GermaniumPhysica Status Solidi (b), 1970